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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 22* i d @ v gs = 12v, t c = 100c continuous drain current 22* i dm pulsed drain current 88 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 155 mj i ar avalanche current 22 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 1.7 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (t ypical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a www.irf.com 1
features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight smd-0.5 radiation hardened jansr2n7479u3 power mosfet 30v, n-channel surface mount (smd-0.5) ref: mil-prf-19500/703 technology IRHNJ57Z30 product summary part number radiation level r ds(on) i d qpl part number IRHNJ57Z30 100k rads (si) 0.020 ? 22a* jansr2n7479u3 irhnj53z30 300k rads (si) 0.020 ? 22a* jansf2n7479u3 irhnj54z30 500k rads (si) 0.020 ? 22a* jansg2n7479u3 irhnj58z30 1000k rads (si) 0.025 ? 22a* jansh2n7479u3 pd - 93751d
IRHNJ57Z30, jansr2n7479u3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.028 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.02 ? v gs = 12v, i d = 22a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 16 ? ? s ( )v ds 15v, i ds = 22a i dss zero gate voltage drain current ? ? 10 v ds = 24v ,v gs =0v ??25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 65 v gs =12v, i d = 22a q gs gate-to-source charge ? ? 20 nc v ds = 15v q gd gate-to-drain (?miller?) charge ? ? 10 t d (on) turn-on delay time ? ? 25 v dd = 15v, i d = 22a, t r rise time ? ? 100 v gs =12v, r g = ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 2054 ? v gs = 0v, v ds = 25v c oss output capacitance ? 936 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 33 ? na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thj-pcb junction-to-pc board ? 6.9 ? !"
# c/w measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on international rectifier web site. source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 22* i sm pulse source current (body diode) ?? 88 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 22a, v gs = 0v t rr reverse recovery time ? ? 102 ns t j = 25c, i f = 22a, di/dt 100a/ s q rr reverse recovery charge ? ? 193 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a

www.irf.com 3 pre-irradiation IRHNJ57Z30, jansr2n7479u3 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 30 ? 30 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 24v, v gs =0v r ds(on) static drain-to-source ? 0.024 ? 0.03 ? v gs = 12v, i d =22a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.02 ? 0.025 ? v gs = 12v, i d =22a on-state resistance (smd-0.5) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHNJ57Z30 (jansr2n7479u3), irhnj53z30 (jansf2n7479u3) and irhnj54z30 (jansg2n7479u3) 2. part number irhnj58z30 (jansh2n7479u3) fig a. single event effect, safe operating area v sd diode forward voltage ? 1.2 ? 1.2 v v gs = 0v, i s = 22a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28 261 40 30 30 30 25 15 br 37 285 37 30 30 30 22.5 15 i 60 344 33 25 25 20 15 7.5 table 2. single event effect safe operating area 0 5 10 15 20 25 30 35 -20 -15 -10 -5 0 vgs vds cu br i
IRHNJ57Z30, jansr2n7479u3 pre-irradiation 4 www.irf.com

15 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 22a 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5.0 6.0 7.0 8.0 9.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 25v
www.irf.com 5 pre-irradiation IRHNJ57Z30, jansr2n7479u3

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1 10 100 0 800 1600 2400 3200 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 6v ds v = 15v ds v = 24v ds 1 10 100 0.4 0.8 1.2 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 100s
IRHNJ57Z30, jansr2n7479u3 pre-irradiation 6 www.irf.com $

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $
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0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) $ 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package
www.irf.com 7 pre-irradiation IRHNJ57Z30, jansr2n7479u3 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 80 160 240 320 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 9.8a 14a 22a
IRHNJ57Z30, jansr2n7479u3 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 15v, starting t j = 25c, l= 0.64mh peak i l = 22a, v gs = 12v i sd 22a, di/dt 54a/ s, v dd 30v, t j 150c footnotes: case outline and dimensions ? smd-0.5 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2006

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